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Germanium JFET for Cryogenic Readout ElectronicsThe n-channel Germanium junction field effect transistor (Ge-JFET) was designed and fabricated for cryogenic applications. The Ge-JFET exhibits superior noise performance at liquid nitrogen temperature (77 K). From the device current voltage characteristics of n-channel JFETs, it is seen that transconductance increases monotonically with the lowering of temperature to 4.2 K (liquid helium temperature).
Document ID
20000031730
Acquisition Source
Goddard Space Flight Center
Document Type
Other
Authors
Das, N. C. (Raytheon/ITSS Lanham, MD United States)
Monroy, C. (Raytheon/ITSS Lanham, MD United States)
Jhabvala, M. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Shu, P. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
September 7, 2013
Publication Date
November 23, 1999
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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