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Results from On-Orbit Testing of the Fram Memory Test Experiment on the Fastsat Micro-SatelliteNASA is planning on going beyond Low Earth orbit with manned exploration missions. The radiation environment for most Low Earth orbit missions is harsher than at the Earth's surface but much less harsh than deep space. Development of new electronics is needed to meet the requirements of high performance, radiation tolerance, and reliability. The need for both Volatile and Non-volatile memory has been identified. Emerging Non-volatile memory technologies (FRAM, C-RAM,M-RAM, R-RAM, Radiation Tolerant FLASH, SONOS, etc.) need to be investigated for use in Space missions. An opportunity arose to fly a small memory experiment on a high inclination satellite (FASTSAT). An off-the-shelf 512K Ramtron FRAM was chosen to be tested in the experiment.
Document ID
20110015720
Acquisition Source
Marshall Space Flight Center
Document Type
Presentation
Authors
MacLeod, Todd C.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Sims, W. Herb
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Varnavas, Kosta A.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Ho, Fat D.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
August 25, 2013
Publication Date
July 30, 2011
Subject Category
Avionics And Aircraft Instrumentation
Report/Patent Number
M11-0865
Meeting Information
Meeting: International Symposium on Integrated Functionalities
Location: Cambridge
Country: United Kingdom
Start Date: July 30, 2011
End Date: August 4, 2011
Distribution Limits
Public
Copyright
Public Use Permitted.
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