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High Power Silicon Carbide (SiC) Power Processing Unit DevelopmentNASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.
Document ID
20150023084
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Scheidegger, Robert J. (NASA Glenn Research Center Cleveland, OH United States)
Santiago, Walter (NASA Glenn Research Center Cleveland, OH United States)
Bozak, Karin E. (NASA Glenn Research Center Cleveland, OH United States)
Pinero, Luis R. (NASA Glenn Research Center Cleveland, OH United States)
Birchenough, Arthur G. (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
December 15, 2015
Publication Date
October 11, 2015
Subject Category
Spacecraft Propulsion And Power
Report/Patent Number
GRC-E-DAA-TN25100
Meeting Information
Meeting: Electrochemical Society (ECS) Meeting
Location: Phoenix, AZ
Country: United States
Start Date: October 11, 2015
End Date: October 15, 2015
Funding Number(s)
WBS: WBS 729200.06.03.02
CONTRACT_GRANT: NNC12BA01B
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
Power Processing
Solar System
Silicon Carbide

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