Influence of gravity-free solidification on microsegregation

Single crystalline germanium has been grown for the first time in space aboard Skylab Mission No. 2. The crystal growth experiment, designed to characterize the influence of gravity-free solidification on microsegregation of a semiconductor material, contained three crystals. One was doped with Ga; the second with Sb; and the third with B. Portions of the germanium crystals were remelted and subsequently resolidified at 5 microns per second under controlled conditions by the gradient freeze technique. Detailed spreading resistance measurements made on the Ga doped Ge crystals indicate that microsegregation in space is reduced by two to five-fold in the bulk and eight-fold near the surface, while macrosegregation in space is reduced by six-fold in the bulk. The effective segregation coefficient for Ga in Ge was analyzed extensively and was found to be larger for space solidification. This has the implication that the solute boundary layer at the growth interface in space is correspondingly thinner. The solidification interface is significantly smoother and is found to be initially convex toward the melt in space. A convective mixing model has been advanced to explain the absence of gravity on convective mixing and solute segregation during solidification.