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Electron beam irradiation of thinned backside illuminated CCDsThe physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.
Document ID
19770010331
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Borsuk, G. M. (ITT Electro-Physics Labs., Inc. Columbia, MD, United States)
Green, J. A. S. (ITT Electro-Physics Labs., Inc. Columbia, MD, United States)
Dewitt, R. N. (ITT Electro-Physics Labs., Inc. Columbia, MD, United States)
Milliany, J. M. (Naval Res. Lab. Washington, D.C., United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1976
Publication Information
Publication: JPL Conf. on Charge-Coupled Device Technol. and Appls.
Subject Category
Nuclear And High-Energy Physics
Accession Number
77N17274
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19770010320Collected WorksConference on Charge-Coupled Device Technology and Applications
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