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Results of the Air Force high efficiency cascaded multiple bandgap solar cell programsThe III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.
Document ID
19810009026
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Rahilly, W. P. (Air Force Wright Aeronautical Labs. Wright-Patterson AFB, OH, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Res. and Technol.
Subject Category
Energy Production And Conversion
Accession Number
81N17548
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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