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Reliability study of refractory gate gallium arsenide MESFETSRefractory gate MESFET's were fabricated as an alternative to aluminum gate devices, which have been found to be unreliable as RF power amplifiers. In order to determine the reliability of the new structures, statistics of failure and information about mechanisms of failure in refractory gate MESFET's are given. Test transistors were stressed under conditions of high temperature and forward gate current to enhance failure. Results of work at 150 C and 275 C are reported.
Document ID
19820007451
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Yin, J. C. W. (Texas Technological Univ. Lubbock, TX, United States)
Portnoy, W. M. (Texas Technological Univ. Lubbock, TX, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Publication Information
Publication: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.
Subject Category
Electronics And Electrical Engineering
Accession Number
82N15324
Funding Number(s)
CONTRACT_GRANT: N00014-78-C-0738
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19820007438Collected WorksProceedings of the Conference on High-temperature Electronics
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