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Solid state microelectronics tolerant to radiation and high temperatureThe 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.
Document ID
19820007458
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Draper, B. L. (Sandia National Labs. Albuquerque, NM, United States)
Palmer, D. W. (Sandia National Labs. Albuquerque, NM, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Publication Information
Publication: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.
Subject Category
Electronics And Electrical Engineering
Accession Number
82N15331
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19820007438Collected WorksProceedings of the Conference on High-temperature Electronics
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