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High temperature LSIIntegrated injection logic (1,2) technology for reliable operation under a -55 C to +300 C, temperature range is discussed. Experimental measurements indicate that an 80 mv signal swing is available at 300 C with 100 micro A injection current per gate. In addition, modeling results predict how large gate fan-ins can decrease the maximum thermal operational limits. These operational limits and the longterm reliability factors associated with device metallization are evaluated via specialized test mask.
Document ID
19820007459
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Dening, D. C. (General Electric Co. Syracuse, NY, United States)
Ragonese, L. J. (General Electric Co. Syracuse, NY, United States)
Lee, C. Y. (General Electric Co. Syracuse, NY, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1982
Publication Information
Publication: NASA. Lewis Research Center Proc. of the Conf. on High-Temp. Electron.
Subject Category
Electronics And Electrical Engineering
Accession Number
82N15332
Funding Number(s)
CONTRACT_GRANT: N00173-79-C-0010
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19820007438Collected WorksProceedings of the Conference on High-temperature Electronics
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