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Overview of a new slicing method: Fixed Abrasive Slicing Technique (FAST)The fixed abrasive slicing technique (FAST) was developed to slice silicon ingots more effectively. It was demonstrated that 25 wafers/cm can be sliced from 10 cm diameter and 19 wafers/cm from 15 cm diameter ingots. This was achieved with a combination of machine development and wire-blade development programs. Correlation was established between cutting effectiveness and high surface speeds. A high speed slicer was designed and fabricated for FAST slicing. Wirepack life of slicing three 10 cm diameter ingots was established. Electroforming techniques were developed to control widths and prolong life of wire-blades. Economic analysis indicates that the projected add-on price of FAST slicing is compatible with the DOE price allocation to meet the 1986 cost goals.
Document ID
19820015793
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Schmid, F. (Crystal Systems, Inc. Salem, MA, United States)
Smith, M. B. (Crystal Systems, Inc. Salem, MA, United States)
Khattak, C. P. (Crystal Systems, Inc. Salem, MA, United States)
Date Acquired
August 10, 2013
Publication Date
February 1, 1982
Publication Information
Publication: JPL Proc. of the Low-Cost Solar Array Wafering Workshop
Subject Category
Energy Production And Conversion
Accession Number
82N23669
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19820015774Collected WorksProceedings of the Low-Cost Solar Array Wafering Workshop
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