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Diffused P+-N solar cells in bulk GaAsRecently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.
Document ID
19830007547
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Borrego, J. M. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Ghandhi, S. K. (Rensselaer Polytechnic Inst. Troy, NY, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1982
Publication Information
Publication: NASA. Lewis Research Center Space Photovoltaic Res. and Technol. 1982: High Efficiency, Radiation Damage, and Blanket Technol.
Subject Category
Energy Production And Conversion
Accession Number
83N15818
Funding Number(s)
CONTRACT_GRANT: NAG3-188
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19830007535Collected WorksSpace Photovoltaic Research and Technology 1982: High Efficiency, Radiation Damage, and Blanket Technology
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