Transit-time devices as local oscillators for frequencies above 100 GHz

Very promising preliminary experimental results have been obtained from GaAs IMPATT diodes at F-band frequencies (75 mW, 3.5 percent at 111.1 GHz and 20 mW, 1.4 percent at 120.6 GHz) and from GaAs TUNNETT diodes at W-band frequencies (26 mW, 1.6 percent at 87.2 GHz and 32 mW, 2.6 percent at 93.5 GHz). These results indicate that IMPATT, MITATT and TUNNETT diodes have the highest potential of delivering significant amounts of power at Terahertz frequencies. As shown recently, the noise performance of GaAs W-band IMPATT diodes can compete with that of Gunn devices. Since TUNNETT diodes take advantage of the quieter tunnel injection, they are expected to be especially suited for low-noise local oscillators. This paper will focus on the two different design principles for IMPATT and TUNNETT diodes, the material parameters involved in the design and some aspects of the present device technology. Single-drift flat-profile GaAs D-band IMPATT diodes had oscillations up to 129 GHz with 9 mW, 0.9 percent at 128.4 GHz. Single-drift GaAs TUNNETT diodes had oscillations up to 112.5 GHz with 16 mW and output power levels up to 33 mW and efficiencies up to 3.4 percent around 102 GHz. These results are the best reported so far from GaAs IMPATT and TUNNETT diodes.