Single event phenomena: Testing and prediction

Highly integrated microelectronic devices are often used to increase the performance of satellite systems while reducing the system power dissipation, size, and weight. However, these devices are usually more susceptible to radiation than less integrated devices. In particular, the problem of sensitivity to single event upset and latchup is greatly increased as the integration level is increased. Therefore, a method for accurately evaluating the susceptibility of new devices to single event phenomena is critical to qualifying new components for use in space systems. This evaluation includes testing devices for upset or latchup and extrapolating the results of these tests to the orbital environment. Current methods for testing devices for single event effects are reviewed, and methods for upset rate prediction, including a new technique based on Monte Carlo simulation, are presented.