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InP Heterojunction Bipolar Transistor Amplifiers to 255 GHzTwo single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.
Document ID
20090008633
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
External Source(s)
http://www.techbriefs.com/component/content/article/3526
Authors
Radisic, Vesna (Northrop Grumman Corp. United States)
Sawdai, Donald (Northrop Grumman Corp. United States)
Scott, Dennis (Northrop Grumman Corp. United States)
Deal, William (Northrop Grumman Corp. United States)
Dang, Linh (Northrop Grumman Corp. United States)
Li, Danny (Northrop Grumman Corp. United States)
Cavus, Abdullah (Northrop Grumman Corp. United States)
To, Richard (Northrop Grumman Corp. United States)
Lai, Richard (Northrop Grumman Corp. United States)
Date Acquired
August 24, 2013
Publication Date
February 1, 2009
Publication Information
Publication: NASA Tech Briefs, February 2009
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NPO-45465
Funding Number(s)
CONTRACT_GRANT: W911QX-06-C-0050
Distribution Limits
Public
Copyright
Public Use Permitted.

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IDRelationTitle20090008629Collected WorksNASA Tech Briefs, February 2009
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