NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Complementary Paired G4FETs as Voltage-Controlled NDR DeviceIt is possible to synthesize a voltage-controlled negative-differential-resistance (NDR) device or circuit by use of a pair of complementary G4FETs (four-gate field-effect transistors). [For more information about G4FETs, please see the immediately preceding article]. As shown in Figure 1, the present voltage-controlled NDR device or circuit is an updated version of a prior NDR device or circuit, known as a lambda diode, that contains a pair of complementary junction field-effect transistors (JFETs). (The lambda diode is so named because its current-versus- voltage plot bears some resemblance to an upper-case lambda.) The present version can be derived from the prior version by substituting G4FETs for the JFETs and connecting both JFET gates of each G4FET together. The front gate terminals of the G4FETs constitute additional terminals (that is, terminals not available in the older JFET version) to which one can apply control voltages VN and VP. Circuits in which NDR devices have been used include (1) Schmitt triggers and (2) oscillators containing inductance/ capacitance (LC) resonant circuits. Figure 2 depicts such circuits containing G4FET NDR devices like that of Figure 1. In the Schmitt trigger shown here, the G4FET NDR is loaded with an ordinary inversion-mode, p-channel, metal oxide/semiconductor field-effect transistor (inversion-mode PMOSFET), the VN terminal of the G4FET NDR device is used as an input terminal, and the input terminals of the PMOSFET and the G4FET NDR device are connected. VP can be used as an extra control voltage (that is, a control voltage not available in a typical prior Schmitt trigger) for adjusting the pinch-off voltage of the p-channel G4FET and thereby adjusting the trigger-voltage window. In the oscillator, a G4FET NDR device is loaded with a conventional LC tank circuit. As in other LC NDR oscillators, oscillation occurs because the NDR counteracts the resistance in the tank circuit. The advantage of this G4FET-NDR LC oscillator over a conventional LC NDR oscillator is that one can apply a time-varying signal to one of the extra control input terminals (VN or VP) to modulate the conductance of the NDR device and thereby amplitude-modulate the output signal.
Document ID
20090035906
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
Authors
Mojarradi, Mohammad
(California Inst. of Tech. Pasadena, CA, United States)
Chen, Suheng
(Tennessee Univ. TN, United States)
Blalock, Ben
(Tennessee Univ. TN, United States)
Britton, Chuck
(Tennessee Univ. TN, United States)
Prothro, Ben
(Tennessee Univ. TN, United States)
Vandersand, James
(Tennessee Univ. TN, United States)
Schrimph, Ron
(Vanderbilt Univ. TN, United States)
Cristoloveanu, Sorin
(Grenoble Univ. France)
Akavardar, Kerem
(Grenoble Univ. France)
Gentil, P.
(Grenoble Univ. France)
Date Acquired
August 24, 2013
Publication Date
October 1, 2009
Publication Information
Publication: NASA Tech Briefs, October 2009
Subject Category
Technology Utilization And Surface Transportation
Report/Patent Number
NPO-43929
Distribution Limits
Public
Copyright
Public Use Permitted.
No Preview Available