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338-GHz Semiconductor Amplifier ModuleResearch findings were reported from an investigation of new gallium nitride (GaN) monolithic millimeter-wave integrated circuit (MMIC) power amplifiers (PAs) targeting the highest output power and the highest efficiency for class-A operation in W-band (75-110 GHz). W-band PAs are a major component of many frequency multiplied submillimeter-wave LO signal sources. For spectrometer arrays, substantial W-band power is required due to the passive lossy frequency multipliers.
Document ID
20100042206
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
External Source(s)
http://www.techbriefs.com/component/content/article/8886
Authors
Samoska, Lorene A. (California Inst. of Tech. Pasadena, CA, United States)
Gaier, Todd C. (California Inst. of Tech. Pasadena, CA, United States)
Soria, Mary M. (California Inst. of Tech. Pasadena, CA, United States)
Fung, King Man (California Inst. of Tech. Pasadena, CA, United States)
Rasisic, Vesna (Northrop Grumman Corp. CA, United States)
Deal, William (Northrop Grumman Corp. CA, United States)
Leong, Kevin (Northrop Grumman Corp. CA, United States)
Mei, Xiao Bing (Northrop Grumman Corp. CA, United States)
Yoshida, Wayne (Northrop Grumman Corp. CA, United States)
Liu, Po-Hsin (Northrop Grumman Corp. CA, United States)
Uyeda, Jansen (Northrop Grumman Corp. CA, United States)
Lai, Richard (Northrop Grumman Corp. CA, United States)
Date Acquired
August 25, 2013
Publication Date
December 1, 2010
Publication Information
Publication: NASA Tech Briefs, December 2010
Subject Category
Man/System Technology And Life Support
Report/Patent Number
NPO-47307
Distribution Limits
Public
Copyright
Public Use Permitted.

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