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On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency MultipliersA 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.
Document ID
20130009446
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
Authors
Chattopadhyay, Goutam
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Mehdi, Imran
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Schlecht, Erich T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lee, Choonsup
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Siles, Jose V.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maestrini, Alain E.
(Paris Univ. France)
Thomas, Bertrand
(Radiometer-Physics G.m.b.H. Meckenheim, Germany)
Jung, Cecile D.
(Oak Ridge Associated Universities United States)
Date Acquired
August 27, 2013
Publication Date
January 1, 2013
Publication Information
Publication: NASA Tech Briefs, January 2013
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NPO-48155
Distribution Limits
Public
Copyright
Public Use Permitted.
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