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A New Method to Grow SiC: Solvent-Laser Heated Floating ZoneThe solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.
Document ID
20130010958
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Woodworth, A. A. (NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip G. (NASA Glenn Research Center Cleveland, OH, United States)
Sayir, Ali (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 27, 2013
Publication Date
November 19, 2012
Subject Category
Solid-State Physics
Report/Patent Number
E-18524-1
GRC-E-DAA-TN6610
Meeting Information
Meeting: 6th International Symposium on Advanced Science and Technology of Silicon Material
Location: Keauhou, HI
Country: United States
Start Date: November 19, 2012
End Date: November 23, 2012
Sponsors: Japan Society for the Promotion of Science
Funding Number(s)
WBS: WBS 031102.02.03.0781.12
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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