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Low-temperature solid-state phase transformations in 2H silicon carbide.Study of the phase transformations taking place in 2H SiC single crystals at temperatures as low as 400 C. Some crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent, and is greatly enhanced by dislocations. The transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid-state transformation above 1400 C.
Document ID
19720043610
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Powell, J. A.
Will, H. A.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 6, 2013
Publication Date
April 1, 1972
Publication Information
Publication: Journal of Applied Physics
Volume: 43
Subject Category
Physics, Solid-State
Accession Number
72A27276
Distribution Limits
Public
Copyright
Other

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