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Ga/1-x/Al/x/As LED structures grown on GaP substrates.Ga(1-x)Al(x)As light-emitting diode structures have been grown on GaP substrates by the liquid-phase-epitaxial method. In spite of the large differences in lattice constants and thermal-expansion coefficients, room-temperature efficiencies up to 5.5% in air have been observed for a peak emission of 8500 A. Using undoped GaP substrates, which are transparent to the infrared and red portions of the spectrum, thin structures of Ga(1-x)Al(x)As with large external efficiencies can now be made.
Document ID
19720047715
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Woodall, J. M.
Potemski, R. M.
Blum, S. E.
(IBM Thomas J. Watson Research Center Yorktown Heights, N.Y., United States)
Lynch, R.
(IBM Corp. Federal Systems Div., Owego, N.Y., United States)
Date Acquired
August 6, 2013
Publication Date
May 15, 1972
Publication Information
Publication: Applied Physics Letters
Volume: 20
Subject Category
Physics, Solid-State
Accession Number
72A31381
Distribution Limits
Public
Copyright
Other

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