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Infrared response measurements on radiation-damaged Si/Li/ detectors.The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.
Document ID
19720047872
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Sher, A. H.
Liu, Y. M.
Keery, W. J.
(National Bureau of Standards, Institute for Applied Technology, Washington D.C., United States)
Date Acquired
August 6, 2013
Publication Date
June 1, 1972
Subject Category
Instrumentation And Photography
Accession Number
72A31538
Distribution Limits
Public
Copyright
Other

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