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Piezoresistance and hole transport in beryllium-doped silicon.The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.
Document ID
19720050168
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Littlejohn, M. A.
(North Carolina State University Raleigh, N.C., United States)
Robertson, J. B.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 6, 2013
Publication Date
July 1, 1972
Publication Information
Publication: Journal of Applied Physics
Volume: 43
Subject Category
Physics, Solid-State
Accession Number
72A33834
Distribution Limits
Public
Copyright
Other

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