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Intermodulation characteristics of X-band IMPATT amplifiers.Measurement of the intermodulation products produced when two equal amplitude signals are applied to the input of an X-band IMPATT diode amplifier. A Si p(+)nn(+) IMPATT diode was operated in a double-slug-tuned reflection amplifier circuit that was tuned to provide 20 dB of small-signal gain at 9.340 GHz. The intermodulation tests consist of measurements of the magnitudes and frequencies of the amplifier output signals as a function of the input signal drive levels and frequency separations. The gain and single-frequency characteristics of the amplifier were also measured and are used along with the theoretical device and circuit admittance characteristics as a basis for explanation of the intermodulation results. A low-frequency dominance mechanism is found to exist in which the low-frequency signals are amplified more than the high-frequency signals. This mechanism becomes more significant as the amplifier drive level is increased.
Document ID
19720053599
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Trew, R. J.
Masnari, N. A.
Haddad, G. I.
(Michigan, University Ann Arbor, Mich., United States)
Date Acquired
August 6, 2013
Publication Date
January 1, 1972
Subject Category
Electronic Equipment
Meeting Information
Meeting: International Microwave Symposium
Location: Arlington Heights, IL
Start Date: May 22, 1972
End Date: May 24, 1972
Accession Number
72A37265
Funding Number(s)
CONTRACT_GRANT: NGL-23-005-183
Distribution Limits
Public
Copyright
Other

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