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Mobility in single crystal Bi2Se3.Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 tesla. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with approximately 10 to the 25th power per cu m 3 total carrier concentration.
Document ID
19730032939
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Woollam, j. A. (NASA Lewis Research Center Cleveland, Ohio, United States)
Beale, H.
Spain, I. L. (Maryland, University College Park, Md., United States)
Date Acquired
August 7, 2013
Publication Date
October 9, 1972
Publication Information
Publication: Physics Letters
Volume: 41A
Subject Category
Physics, Solid-State
Accession Number
73A17741
Distribution Limits
Public
Copyright
Other

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