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Solid-phase epitaxial growth of Si mesas from Al metallization.Using scanning electron microscopy, Si epitaxial growth from solution in solid Al onto crystal Si substrates was studied. Growth in reentrant corners of the substrate was found to be favored over growth onto a flat surface. These preferred locations for growth appear to be the result of a force not present in conventional crystal growth from fluid media, namely, the nonuniform stress field present in solids.
Document ID
19730033848
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Sankur, H.
Mccaldin, J. O.
(California Institute of Technology Pasadena, Calif., United States)
Devaney, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 7, 2013
Publication Date
January 15, 1973
Publication Information
Publication: Applied Physics Letters
Volume: 22
Subject Category
Physics, Solid-State
Accession Number
73A18650
Distribution Limits
Public
Copyright
Other

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