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Microwave properties of n-type InSb in a magnetic field between 4 and 300 K.A two-band conduction model is used to determine the properties of shallow-type impurity semiconductors in the presence of microwave and dc magnetic fields as a function of temperature. Measurements using cavity perturbation techniques are employed to determine the properties of n-type InSb and theoretical and experimental results between 4 and 300 K are compared. The hot-electron effect was found to be insignificant between 77 and 300 K, and the scattering mechanisms are dominated by acoustic and polar modes over the same temperature range.-
Document ID
19730033990
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Eldumiati, I. I.
Haddad, G. I.
(Michigan, University Ann Arbor, Mich., United States)
Date Acquired
August 7, 2013
Publication Date
January 1, 1973
Publication Information
Publication: Journal of Applied Physics
Volume: 44
Subject Category
Physics, Solid-State
Accession Number
73A18792
Funding Number(s)
CONTRACT_GRANT: NGL-23-005-183
Distribution Limits
Public
Copyright
Other

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