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Electrical contacts to ion cleaned n-type gallium arsenide.The electrical current through silver contacts evaporated onto n-type gallium arsenide is reported as a function of surface treatment. Contacts to untreated gallium arsenide exhibit the expected high resistance. Surface cleaning by argon ion bombardment reduces the resistance by three orders of magnitude. The electrical resistance beyond 850 eV increases rapidly with ion bombardment energy. The resistance minimum at 850 eV is explained semiquantitatively in terms of a balance between cleaning and surface damage.
Document ID
19730034334
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Walker, G. H.
Conway, E. J.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 7, 2013
Publication Date
December 1, 1972
Subject Category
Electronic Equipment
Accession Number
73A19136
Distribution Limits
Public
Copyright
Other

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