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Electron tunnelling into amorphous germanium and silicon.Measurements of tunnel conductance versus bias, capacitance versus bias, and internal photoemission were made in the systems aluminum-oxide-amorphous germanium and aluminium-oxide-amorphous silicon. A function was extracted which expresses the deviation of these systems from the aluminium-oxide-aluminium system.
Document ID
19730035652
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Smith, C. W.
Clark, A. H.
(Maine, University Orono, Me., United States)
Date Acquired
August 7, 2013
Publication Date
January 1, 1972
Publication Information
Publication: Thin Solid Films
Volume: 9
Subject Category
Physics, Solid-State
Accession Number
73A20454
Funding Number(s)
CONTRACT_GRANT: NGR-20-006-016
Distribution Limits
Public
Copyright
Other

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