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A non-LTE study of silicon line formation in early-type main-sequence atmospheres.We have computed populations of 16 levels of Si III-V and radiation fields in all connecting transitions; in particular the first six Si III triplet levels, including the 4553 line, and the first six Si IV levels including 4089. The computations were done for four non-LTE H-He model atmospheres, provided by Auer and Mihalas. Estimates of corresponding MK types are B1.5 V, B0.5 V, O9 V, and O6. Solutions were obtained by iterating the linearized equations of radiative transfer and statistical equilibrium, except that for less important lines an approximate equivalent two-level atom treatment was used. Continuous opacities of C, N, O, and Ne were included. All abundances were solar values.
Document ID
19730038730
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kamp, L. W.
(Chicago, University, Chicago, Ill.; NASA, Goddard Space Flight Center Greenbelt, Md., United States)
Date Acquired
August 7, 2013
Publication Date
March 1, 1973
Publication Information
Publication: Astrophysical Journal
Volume: 180
Subject Category
Space Sciences
Accession Number
73A23532
Funding Number(s)
CONTRACT_GRANT: NSF GP-24526
Distribution Limits
Public
Copyright
Other

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