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Methods of Measurement for Semiconductor Materials, Process Control, and DevicesThe development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.
Document ID
19740004123
Acquisition Source
Headquarters
Document Type
Contractor or Grantee Report
Authors
Bullis, W. M.
(National Bureau of Standards Washington, DC, United States)
Date Acquired
August 7, 2013
Publication Date
November 1, 1973
Subject Category
Machine Elements And Processes
Report/Patent Number
NBS-TN-806
Accession Number
74N12236
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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