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Excess junction current of silicon solar cellsThe current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.
Document ID
19740042157
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Wang, E. Y.
(Wayne State University Detroit, Mich., United States)
Legge, R. N.
Christidis, N.
Date Acquired
August 7, 2013
Publication Date
January 1, 1973
Subject Category
Auxiliary Systems
Meeting Information
Meeting: International Congress on the Sun in the Service of Man
Location: Paris
Country: France
Start Date: July 2, 1973
End Date: July 6, 1973
Accession Number
74A24907
Funding Number(s)
CONTRACT_GRANT: NGR-23-006-057
Distribution Limits
Public
Copyright
Other

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