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Solar and laser energy conversion with Schottky barrier solar cellsPhotovoltaic devices have been fabricated for solar and short-wavelength laser energy conversion using the thin metal film-semiconductor (Schottky barrier) approach. Studies of the metal film optical characteristics and the voltage outputs were emphasized. Air mass zero efficiencies of 8 to 9% in GaAs and laser conversion efficiencies of 25% at 4880 A in GaAs(0.6)P(0.4) are presently measured, with projected efficiencies of 15 and 45%, respectively. The techniques, if applied successfully to semiconductor thin films, could have an impact in solar energy terrestrial application.
Document ID
19740051620
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Stirn, R. J.
Yeh, Y.-C. M.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 7, 2013
Publication Date
January 1, 1974
Subject Category
Auxiliary Systems
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Palo Alto, CA
Start Date: November 13, 1973
End Date: November 15, 1973
Sponsors: Institute of Electrical and electronics Engineers
Accession Number
74A34370
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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