Low-high junction theory applied to solar cellsRecent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.
Document ID
19740051624
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Godlewski, M. P.
Baraona, C. R.
Brandhorst, H. W., Jr. (NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 7, 2013
Publication Date
January 1, 1974
Subject Category
Auxiliary Systems
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Palo Alto, CA
Start Date: November 13, 1973
End Date: November 15, 1973
Sponsors: Institute of Electrical and electronics Engineers