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Interdiffusion in the Ni/TD-NiCr and Cr/TD-NiCr systemsThe diffusion of Ni and Cr into TD-NiCr has been studied over the 900 to 1100 C temperature range. The diffusion couples were prepared by electroplating Cr and Ni on polished TD-NiCr wafers. Concentration profiles produced as a result of isothermal diffusion at 905, 1000, and 1100 C were determined by electron microprobe analysis. The Boltzmann-Matano analysis was used to determine concentration-dependent diffusion coefficients which were found to compare favorably with previously reported values. These data suggest that 2 vol % ThO2 distribution has no appreciable effect on the rates of diffusion in TD-NiCr with a large grain size. This supports the view that an inert dispersoid in an alloy matrix will not in itself lead to enhanced diffusion unless a short-circuit diffusion structure is stabilized.
Document ID
19740063466
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Pawar, A. V.
Tenney, D. R.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 7, 2013
Publication Date
October 1, 1974
Publication Information
Publication: Metallurgical Transactions
Volume: 5
Subject Category
Materials, Metallic
Accession Number
74A46216
Distribution Limits
Public
Copyright
Other

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