High voltage power Schottky diodesCalculations of the low frequency rectification efficiency of power Schottky diodes show that silicon Schottky rectifiers have lower losses than silicon p-n junctions for all voltage applications up to approximately 150 volts. These calculations are presented. Large area Schottky diodes have been fabricated which exhibit near ideal reverse leakage at 100 C out to approximately 100 volts and which have current capability of 100 A. Fabrication details and performance data are presented.
Document ID
19750039515
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Cordes, L. F.
Garfinkel, M. (General Electric Co. Schenectady, N.Y., United States)