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Dependence of resistivity on the doping level of polycrystalline siliconThe electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.
Document ID
19750041012
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fripp, A. L.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 8, 2013
Publication Date
March 1, 1975
Publication Information
Publication: Journal of Applied Physics
Volume: 46
Subject Category
Solid-State Physics
Accession Number
75A25084
Distribution Limits
Public
Copyright
Other

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