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Ovonic type switching in tin selenide thin filmsAmorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.
Document ID
19750041605
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Baxter, C. R.
Mclennan, W. D.
(Tennessee Technological University Cookeville, Tenn., United States)
Date Acquired
August 8, 2013
Publication Date
February 1, 1975
Subject Category
Solid-State Physics
Accession Number
75A25677
Distribution Limits
Public
Copyright
Other

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