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An investigation of RF sputter etched silicon surfaces using helium ion backscatterThe effect of RF sputter etching on the (111) surface of silicon was studied by observing backscatter spectra from a 2 MeV, He-4(+) beam oriented along the silicon 111 orientation channel. Silicon samples were RF sputter etched in an argon discharge at electrode bias potentials ranging from 0.5 to 2.5 kV. The samples were sputter etched for a time sufficient for the lattice damage to reach saturation. Analysis of these samples revealed that the thickness of this damage layer and the concentration of trapped argon increased with electrode bias potential. An annealing study of these damaged surfaces was carried out to 900 C.
Document ID
19750042858
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Sachse, G. W.
Miller, W. E.
Gross, C.
(NASA Langley Research Center Hampton, Va., United States)
Date Acquired
August 8, 2013
Publication Date
May 1, 1975
Publication Information
Publication: Solid-State Electronics
Volume: 18
Subject Category
Solid-State Physics
Accession Number
75A26930
Distribution Limits
Public
Copyright
Other

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