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A measurement technique of time-dependent dielectric breakdown in MOS capacitorsThe statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.
Document ID
19760027524
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Li, S. P.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena; California State Polytechnic University Pomona, Calif., United States)
Date Acquired
August 8, 2013
Publication Date
June 1, 1974
Publication Information
Publication: Microelectronics and Reliability
Volume: 13
Subject Category
Electronics And Electrical Engineering
Accession Number
76A10490
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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