Fundamental limitations imposed by high doping on the performance of pn junction silicon solar cellsFundamental limitations imposed on the performance of silicon junction solar cells by physical mechanisms accompanying high doping are described. The one-dimensional mechanisms divide into two broad categories: those associated with band-gap shrinkage and those associated with interband transition rates. By extending the traditional method of analysis and comparing with measurement, it is shown that the latter kind of mechanism dominates in determining the open-circuit voltage in a one-dimensional model of a 0.1 ohm-cm cell at 300 K. As an alternative dominant mechanism, a three-dimensional model involving thermodynamically stable clusters of impurities in the highly-doped diffused layer is suggested.
Document ID
19760031762
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Lindholm, F. A. (Florida Univ. Gainesville, FL, United States)
Li, S. S. (Florida, University Gainesville, Fla., United States)
Sah, C. T. (Illinois, University Urbana, Ill., United States)