Diffusion length improvements in GaAs associated with Zn diffusion during Ga/1-x/Al/x/As growthRelatively good GaAs solar cells can be made from poor quality substrates by making the junction deep (more than 1 micron) instead of shallow and by leaching both the p and n GaAs regions during the growth process. Air-mass-zero efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate thickness of 0.6 micron.
Document ID
19760031817
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Hovel, H. J. (IBM Watson Research Center Yorktown Heights, NY, United States)
Woodall, J. M. (IBM Thomas J. Watson Research Center Yorktown Heights, N.Y., United States)