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Time-dependent MOS breakdownA general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.
Document ID
19760038801
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Li, S. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bates, E. T.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 8, 2013
Publication Date
March 1, 1976
Publication Information
Publication: Solid-State Electronics
Volume: 19
Subject Category
Electronics And Electrical Engineering
Accession Number
76A21767
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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