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Preparation of tantalum-based alloys by a unique CVD processThe paper describes a sequential pulsing technique for deposition of refractory alloys and evaluates the technique for the deposition of the tantalum-base alloys Ta-10W (Ta-10 st% W) and T-111 (Ta-8 wt% W-2 wt% Hf). The deposition cycle for Ta-10W was chosen as alternate injections of TaCl5 plus hydrogen and WCl6 plus hydrogen. The cycle for T-111 was chosen as injections of TaCl5 plus hydrogen interspersed with injections of WCl6 plus hydrogen. A temperature range of 900-1300 C was chosen for both alloys. The ability of the pulse process to blanket a uniformly heated section of substrate with a mixture of gases, whose composition varies not with position on the substrate but instead with time of residence in the reactor, allows metal of uniform thickness to be deposited. It is shown that Ta and W can be deposited at high temperature with the formation of a dense columnar grain structure, so that the feasibility of preparing uniformly thick deposits of these elements by a 'pulsing' modification of CVD is demonstrated. A similar attempt to deposit T-111 was unsuccessful due to the difficulty in reducing HfCl4.
Document ID
19760062316
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Bryant, W. A.
(Westinghouse Astronuclear Laboratories Pittsburgh, Pa., United States)
Meier, G. H.
(Pittsburgh, University Pittsburgh, Pa., United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1975
Subject Category
Metallic Materials
Meeting Information
Meeting: International Conference on Chemical Vapor Deposition
Location: Bucks.
Start Date: September 21, 1975
End Date: September 26, 1975
Accession Number
76A45282
Funding Number(s)
CONTRACT_GRANT: NGR-39-011-164
Distribution Limits
Public
Copyright
Other

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