NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Determination of surface recombination velocity in heavily doped siliconA method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.
Document ID
19760064103
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Watanabe, M.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Actor, G.
(MIT Cambridge, Mass., United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1976
Subject Category
Solid-State Physics
Meeting Information
Meeting: International Symposium on Solar Energy
Location: Washington, DC
Start Date: May 5, 1976
End Date: May 7, 1976
Accession Number
76A47069
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available