Determination of surface recombination velocity in heavily doped siliconA method was developed and successfully tested for the determination of the effective surface recombination velocity of silicon layers doped by diffusion of phosphorus to a level of 10 to the 19th to 10 to the 21st per cu cm. The effective recombination velocity was obtained from the dependence of the electron-beam-induced current on the penetration of the electron beam of a scanning electron microscope. A special silicon diode was constructed which permitted the collection at the p-n junction of the carriers excited by the electron beam. This diode also permitted the study of the effects of surface preparation on the effective surface recombination velocity.
Document ID
19760064103
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Watanabe, M. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C. (Massachusetts Inst. of Tech. Cambridge, MA, United States)