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New process produces high-power Schottky diodesProcessing procedure using low-temperature platinum silicide, results in successful high-yield fabrication of large-area mesa-geometry Schottky diodes, with reverse breakdown voltages as high as 150 volts and leak currents less than 5 milliamps at 212 F.
Document ID
19770000337
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Cordes, L. F. (GE)
Garfinkel, M. (GE)
Taft, E. A. (GE)
Date Acquired
August 8, 2013
Publication Date
March 1, 1977
Publication Information
Publication: NASA Tech Briefs
Volume: 2
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-12749
Accession Number
77B10337
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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