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A sub-nanosecond CCDA 32-cell silicon n-channel PCCD was fabricated and tested for charge transfer efficiency versus transfer time. A charge transfer time of 550 picoseconds with a 0.9998 transfer efficiency was obtained when operated in the uni-phase mode. These conditions correspond to an operating rate of 900 MHz when operated as an analog data or digital device.
Document ID
19770010330
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Chan, Y. T. (Rockwell International Corp. Anaheim, CA, United States)
Date Acquired
August 8, 2013
Publication Date
January 1, 1976
Publication Information
Publication: JPL Conf. on Charge-Coupled Device Technol. and Appls.
Subject Category
Electronics And Electrical Engineering
Accession Number
77N17273
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19770010320Collected WorksConference on Charge-Coupled Device Technology and Applications
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