NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Technology of GaAs metal-oxide-semiconductor solar cellsThe growth of an oxide interfacial layer was recently found to increase the open-circuit voltage (OCV) and efficiency by up to 60 per cent in GaAs metal-semiconductor solar cells. Details of oxidation techniques to provide the necessary oxide thickness and chemical structure and using ozone, water-vapor-saturated oxygen, or oxygen gas discharges are described, as well as apparent crystallographic orientation effects. Preliminary results of the oxide chemistry obtained from X-ray, photoelectron spectroscopy are given. Ratios of arsenic oxide to gallium oxide of unity or less seem to be preferable. Samples with the highest OVC predominantly have As(+3) in the arsenic oxide rather than As(+5). A major difficulty at this time is a reduction in OCV by 100-200 mV when the antireflection coating is vacuum deposited.
Document ID
19770047887
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Stirn, R. J.
(California Inst. of Tech. Pasadena, CA, United States)
Yeh, Y. C. M.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 8, 2013
Publication Date
April 1, 1977
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-24
Subject Category
Energy Production And Conversion
Accession Number
77A30739
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available