Gate assisted turn-off thyristor with cathode shunts and dynamic gateA 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.
Document ID
19770049385
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Schlegel, E. S. (Westinghouse Research Labs. Pittsburgh, PA, United States)
Page, D. J. (Westinghouse Research Laboratories Pittsburgh, Pa., United States)