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Application of the SEM to the measurement of solar cell parametersA pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.
Document ID
19770049390
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weizer, V. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Andrews, C. W.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 8, 2013
Publication Date
March 1, 1977
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Annual Scanning Electron Microscopy Symposium
Location: Chicago, IL
Start Date: March 28, 1977
End Date: April 1, 1977
Sponsors: Illinois Institute of Technology
Accession Number
77A32242
Distribution Limits
Public
Copyright
Other

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