Large area Czochralski silicon for solar cellsA detailed model of a typical Czochralski silicon crystal puller is utilized to predict maximum crystal growth rate as a function of various furnace parameters. Results of this analysis, when combined with multiblade slurry sawing, indicate that the Czochralski process is highly attractive for achieving near-term cost reduction of solar cell silicon.
Document ID
19770066202
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Rea, S. N. (Texas Instruments, Inc. Dallas, TX, United States)
Wakefield, G. F. (Texas Instruments, Inc. Dallas, Tex., United States)
Date Acquired
August 9, 2013
Publication Date
January 1, 1976
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Joint Conference on Sharing the sun: Solar technology in the seventies